Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface
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منابع مشابه
Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN
Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, p...
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